Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature
文献类型：期刊论文
| 作者 | Liu, J (Liu, J.) ; Li, L (Li, L.) ; Liu, S (Liu, S.) ; Liu, M (Liu, Min) ; Wang, YG (Wang, Y.-G.) |
| 刊名 | european physical journal-applied physics
 |
| 出版日期 | 2007 |
| 卷号 | 39期号:3页码:233-236 |
| ISSN号 | issn: 1286-0042 |
| 关键词 | ND-YAG LASER |
| 通讯作者 | liu, j, shandong normal univ, coll phys & elect, jinan 250014, peoples r china. |
| 中文摘要 | using a low temperature grown gaas wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of q- switched and mode- locked ( qml) 1064 nm operation was achieved in a very simple compact plane- concave cavity nd: yvo4 laser, it was so short that the pulses can be used as q- switching pulses. the maximal average output power is 808 mw with the repetition rate of 25 khz, and the corresponding peak power and energy of a single q- switched pulse was 2.94 kw and 32.3 mu j, respectively. the mode- locked pulse trains inside the q- switched pulse envelope had a repetition rate of 800 mhz. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9298]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu, J ,Li, L ,Liu, S ,et al. Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature[J]. european physical journal-applied physics,2007,39(3):233-236. |
| APA | Liu, J ,Li, L ,Liu, S ,Liu, M ,&Wang, YG .(2007).Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature.european physical journal-applied physics,39(3),233-236. |
| MLA | Liu, J ,et al."Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature".european physical journal-applied physics 39.3(2007):233-236. |
入库方式： OAI收割
来源：半导体研究所
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