Ordered InAs quantum dots with controllable periods grown on stripe-patterned GaAs substrates
文献类型：期刊论文
| 作者 | Ren, YY (Ren Yun-Yun) ; Xu, B (Xu Bo) ; Wang, ZG (Wang Zhan-Guo) ; Liu-Ming (Liu-Ming) ; Long, SB (Long Shi-Bing) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:9页码:2689-2691 |
| 关键词 | GE ISLANDS |
| ISSN号 | issn: 0256-307x |
| 通讯作者 | ren, yy, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: yunyun_ren@mail.semi.ac.cn |
| 中文摘要 | gaas (001) substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of inas quantum dots (qds). inas dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy, a thick buffer layer is deposited on the strip pattern before the deposition of inas. to enhance the surface diffusion length of the in atoms, inas is deposited with low growth rate and low as pressure. the afm images show that distinct one-dimensionally ordered inas qds with homogeneous size distribution are created, and the qds preferentially nucleate along the trench. with the increasing amount of deposited inas and the spacing of the trenches, a number of qds are formed beside the trenches. the distribution of additional qds is long-range ordered, always along the trenchs rather than across the spacing regions. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9300]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ren, YY ,Xu, B ,Wang, ZG ,et al. Ordered InAs quantum dots with controllable periods grown on stripe-patterned GaAs substrates[J]. chinese physics letters,2007,24(9):2689-2691. |
| APA | Ren, YY ,Xu, B ,Wang, ZG ,Liu-Ming ,&Long, SB .(2007).Ordered InAs quantum dots with controllable periods grown on stripe-patterned GaAs substrates.chinese physics letters,24(9),2689-2691. |
| MLA | Ren, YY ,et al."Ordered InAs quantum dots with controllable periods grown on stripe-patterned GaAs substrates".chinese physics letters 24.9(2007):2689-2691. |
入库方式： OAI收割
来源：半导体研究所
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