Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well
文献类型：期刊论文
| 作者 | Zhou, WZ (Zhou, W. Z.) ; Lin, T (Lin, T.) ; Shang, LY (Shang, L. Y.) ; Yu, G (Yu, G.) ; Huang, ZM (Huang, Z. M.) ; Guo, SL (Guo, S. L.) ; Gui, YS (Gui, Y. S.) ; Dai, N (Dai, N.) ; Chu, JH (Chu, J. H.) ; Cui, LJ (Cui, L. J.) ; Li, DL (Li, D. L.) ; Gao, HL (Gao, H. L.) ; Zeng, YP (Zeng, Y. P.) |
| 刊名 | solid state communications
 |
| 出版日期 | 2007 |
| 卷号 | 143期号:6-7页码:300-303 |
| 关键词 | quantum well |
| ISSN号 | issn: 0038-1098 |
| 通讯作者 | chu, jh, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china. 电子邮箱地址: jhchu@mail.sitp.ac.cn |
| 中文摘要 | we have observed the weak antilocalization (wal) and beating sdh oscillation through magnetotransport measurements performed on a heavily delta-doped in0.52al0.48as/in0.53ga0.47as/in0.5al0.48as single quantum well in an applied magnetic field up to 13 t and a temperature at 1.5 k. both effects are caused by the strong rashba spin-orbit (so) coupling due to high structure inversion asymmetry (sia). the rashba so coupling constant alpha and zerotield spin splitting delta(0) are estimated and the obtained values are consistent from different analysis for this sample. (c) 2007 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9308]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou, WZ ,Lin, T ,Shang, LY ,et al. Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well[J]. solid state communications,2007,143(6-7):300-303. |
| APA | Zhou, WZ .,Lin, T .,Shang, LY .,Yu, G .,Huang, ZM .,...&Zeng, YP .(2007).Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well.solid state communications,143(6-7),300-303. |
| MLA | Zhou, WZ ,et al."Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well".solid state communications 143.6-7(2007):300-303. |
入库方式： OAI收割
来源：半导体研究所
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