中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well

文献类型:期刊论文

作者Zhou, WZ (Zhou, W. Z.) ; Lin, T (Lin, T.) ; Shang, LY (Shang, L. Y.) ; Yu, G (Yu, G.) ; Huang, ZM (Huang, Z. M.) ; Guo, SL (Guo, S. L.) ; Gui, YS (Gui, Y. S.) ; Dai, N (Dai, N.) ; Chu, JH (Chu, J. H.) ; Cui, LJ (Cui, L. J.) ; Li, DL (Li, D. L.) ; Gao, HL (Gao, H. L.) ; Zeng, YP (Zeng, Y. P.)
刊名solid state communications
出版日期2007
卷号143期号:6-7页码:300-303
ISSN号issn: 0038-1098
关键词quantum well
通讯作者chu, jh, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china. 电子邮箱地址: jhchu@mail.sitp.ac.cn
中文摘要we have observed the weak antilocalization (wal) and beating sdh oscillation through magnetotransport measurements performed on a heavily delta-doped in0.52al0.48as/in0.53ga0.47as/in0.5al0.48as single quantum well in an applied magnetic field up to 13 t and a temperature at 1.5 k. both effects are caused by the strong rashba spin-orbit (so) coupling due to high structure inversion asymmetry (sia). the rashba so coupling constant alpha and zerotield spin splitting delta(0) are estimated and the obtained values are consistent from different analysis for this sample. (c) 2007 elsevier ltd. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-29
源URL[http://ir.semi.ac.cn/handle/172111/9308]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhou, WZ ,Lin, T ,Shang, LY ,et al. Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well[J]. solid state communications,2007,143(6-7):300-303.
APA Zhou, WZ .,Lin, T .,Shang, LY .,Yu, G .,Huang, ZM .,...&Zeng, YP .(2007).Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well.solid state communications,143(6-7),300-303.
MLA Zhou, WZ ,et al."Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well".solid state communications 143.6-7(2007):300-303.

入库方式: OAI收割

来源:半导体研究所

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