Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer
文献类型：期刊论文
| 作者 | Chen P
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 91期号:3页码:art.no.031103 |
| 关键词 | QUANTUM-WELLS |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | chen, p, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: pchen@semi.ac.cn |
| 中文摘要 | six-period 4 nm gan/10 nm alxga1-xn superlattices with different al mole fractions x were prepared on (0001) sapphire substrates by low-temperature metal-organic chemical vapor deposition. the linear electro-optic (pockels) effect was studied by a polarization-maintaining fiber-optical mach-zehnder interferometer system with an incident light wavelength of 1.55 mu m. the measured electro-optic coefficients, gamma(13)=5.60 +/- 0.18 pm/v, gamma(33)=19.24 +/- 1.21 pm/v (for sample 1, x=0.3), and gamma(13)=3.09 +/- 0.48 pm/v, gamma(33)=8.94 +/- 0.36 pm/v (for sample 2, x=0.1), respectively, are about ten times larger than those of gan bulk material. the enhancement effect in gan/alxga1-xn superlattice can be attributed to the large built-in field at the interfaces, depending on the mole fraction of al. (c) 2007 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9334]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen P. Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer[J]. applied physics letters,2007,91(3):art.no.031103. |
| APA | Chen P.(2007).Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer.applied physics letters,91(3),art.no.031103. |
| MLA | Chen P."Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer".applied physics letters 91.3(2007):art.no.031103. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。