Effects of the wave function localization in AlInGaN quaternary alloys
文献类型：期刊论文
| 作者 | Wang, F (Wang, Fei) ; Li, SS (Li, Shu-Shen) ; Xia, JB (Xia, Jian-Bai) ; Jiang, HX (Jiang, H. X.) ; Lin, JY (Lin, J. Y.) ; Li, J (Li, Jingbo) ; Wei, SH (Wei, Su-Huai) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 91期号:6页码:art.no.061125 |
| 关键词 | SPECIAL QUASIRANDOM STRUCTURES |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | wang, f, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: suhuai_wei@nrel.gov |
| 中文摘要 | using the first-principles band-structure method and the special quasirandom structures approach, the authors have investigated the band structure of random alxinyga1-x-yn quaternary alloys. they show that the wave functions of the band edge states are more localized on the inn sites. consequently, the photoluminescence transition intensity in the alloy is higher than that in gan. the valence band maximum state of the quaternary alloy is also higher than gan with the same band gap, indicating that the alloy can be doped more easily as p-type. (c) 2007 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9342]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, F ,Li, SS ,Xia, JB ,et al. Effects of the wave function localization in AlInGaN quaternary alloys[J]. applied physics letters,2007,91(6):art.no.061125. |
| APA | Wang, F .,Li, SS .,Xia, JB .,Jiang, HX .,Lin, JY .,...&Wei, SH .(2007).Effects of the wave function localization in AlInGaN quaternary alloys.applied physics letters,91(6),art.no.061125. |
| MLA | Wang, F ,et al."Effects of the wave function localization in AlInGaN quaternary alloys".applied physics letters 91.6(2007):art.no.061125. |
入库方式： OAI收割
来源：半导体研究所
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