Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation
文献类型：期刊论文
| 作者 | Hu LJ (Hu Liang-Jun) ; Chen YH (Chen Yong-Hai) ; Ye XL (Ye Xiao-Ling) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:8页码:4930-4935 |
| 关键词 | ion implantation |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | hu, lj, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: liangjun_hu@yahoo.com.cn |
| 中文摘要 | mn ions were doped into inas/gaas quantum dots samples by high energy. implantation and subsequent annealing. the optical and electric properties of the samples have been studied. the photoluminescence intensity of the samples annealed rapidly is stronger than that of the samples annealed for long time. by studying the relationship between the photoluminescence peaks and the implantation dose, it can be found that the photoluminescence peaks of the quantum dots show a blueshift firstly and then move to low energy with the implantation. dose increasing. the latter change in the photoluminescence peaks is probably attributed to that mn ions entering the inas quantum dots, which release the strain of the quantum dots. for the samples implanted by heavy dose (annealed rapidly) and the samples annealed for long time, the resistances versus temperature curves reveal anomalous peaks around 40 k. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9344]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hu LJ ,Chen YH ,Ye XL ,et al. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation[J]. acta physica sinica,2007,56(8):4930-4935. |
| APA | Hu LJ ,Chen YH ,Ye XL ,&Wang ZG .(2007).Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation.acta physica sinica,56(8),4930-4935. |
| MLA | Hu LJ ,et al."Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation".acta physica sinica 56.8(2007):4930-4935. |
入库方式： OAI收割
来源：半导体研究所
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