Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness
文献类型：期刊论文
| 作者 | Gao, HL (Gao Hong-Ling) ; Li, DL (Li Dong-Lin) ; Zhou, WZ (Zhou Wen-Zheng) ; Shang, LY (Shang Li-Yan) ; Wang, BQ (Wang Bao-Qiang) ; Zhu, ZP (Zhu Zhan-Ping) ; Zeng, YP (Zeng Yi-Ping) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:8页码:4955-4959 |
| 关键词 | channel thickness |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | gao, hl, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: hlgao@red.semi.ac.cn |
| 中文摘要 | magnetotransport properties of in-0.53 gaas/in-0.52 alas high electron mobility transistor (hemt) structures with different channel thickness of 10-35 nm have been investigated in magnetic fields up to 13 t at 1.4 k. fast fourier transform has been employed to obtain the subband density and mobility of the two-dimensional electron gas in these hemt structures. we found that the thickness of channel does not significantly enhance the electron density of the two-dimensional electron gas, however, it has strong effect on the proportion of electrons inhabited in different subbands. when the size of channel is 20 nm, the number of electrons occupying the excited subband, which have higher mobility, reaches the maximum. the experimental values obtained in this work are useful for the design and optimization of ingaas/inalas hemt devices. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9346]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao, HL ,Li, DL ,Zhou, WZ ,et al. Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness[J]. acta physica sinica,2007,56(8):4955-4959. |
| APA | Gao, HL .,Li, DL .,Zhou, WZ .,Shang, LY .,Wang, BQ .,...&Zeng, YP .(2007).Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness.acta physica sinica,56(8),4955-4959. |
| MLA | Gao, HL ,et al."Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness".acta physica sinica 56.8(2007):4955-4959. |
入库方式： OAI收割
来源：半导体研究所
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