A study on the minority carrier diffusion length in n-type GaN films
文献类型：期刊论文
| 作者 | Deng DM (Deng Dongmei) ; Zhao DG (Zhao Degang) ; Wang JY (Wang Jinyan) ; Yang H (Yang Hui) ; Wen CP (Wen Cheng Paul) |
| 刊名 | rare metals
 |
| 出版日期 | 2007 |
| 卷号 | 26期号:3页码:271-275 |
| 关键词 | compound semiconductor material |
| ISSN号 | issn: 1001-0521 |
| 通讯作者 | deng, dm, peking univ, inst microelect, beijing 100871, peoples r china. 电子邮箱地址: dmdeng@ime.pku.edu.cn |
| 中文摘要 | the minority carrier diffusion length of n-type gan films grown by metalorganic chemical vapor deposition (mocvd) has been studied by measuring the surface photovoltaic (pv) spectra. it was found that the minority carrier diffusion length of undoped n-type gan is considerably larger than that in lightly si-doped gan. however, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. it is suggested that si doping plays an important role in decreasing the minority carrier diffusion length. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9350]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Deng DM ,Zhao DG ,Wang JY ,et al. A study on the minority carrier diffusion length in n-type GaN films[J]. rare metals,2007,26(3):271-275. |
| APA | Deng DM ,Zhao DG ,Wang JY ,Yang H ,&Wen CP .(2007).A study on the minority carrier diffusion length in n-type GaN films.rare metals,26(3),271-275. |
| MLA | Deng DM ,et al."A study on the minority carrier diffusion length in n-type GaN films".rare metals 26.3(2007):271-275. |
入库方式： OAI收割
来源：半导体研究所
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