Electronic states of a hydrogenic donor impurity in semiconductor nano-structures
文献类型：期刊论文
| 作者 | Li SS (Li Shu-Shen) ; Xia HB (Xia Han-Bai) |
| 刊名 | physics letters a
 |
| 出版日期 | 2007 |
| 卷号 | 366期号:1-2页码:120-123 |
| 关键词 | hydrogenic donor impurity |
| ISSN号 | issn: 0375-9601 |
| 通讯作者 | li, ss, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: sslee@red.semi.ac.cn |
| 中文摘要 | we propose a method for uniformly calculating the electronic states of a hydrogenic donor impurity in low-dimensional semiconductor nano-structures in the framework of effective-mass envelope-function theory, and we study the electronic structures of this systems. compared to previous methods, our method has the following merits: (a) it can be widely applied in the calculation of the electronic states of hydrogenic donor impurities in nano-structures of various shapes; (b) it can easily be extended to study the effects of external fields and other complex cases; (c) the excited states are more easily calculated than with the variational method; (d) it is convenient to calculate the change of the electronic states with the position of a hydrogenic donor impurity in nano-structures; (e) the binding energy can be calculated explicitly. (c) 2007 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9352]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li SS ,Xia HB . Electronic states of a hydrogenic donor impurity in semiconductor nano-structures[J]. physics letters a,2007,366(1-2):120-123. |
| APA | Li SS ,&Xia HB .(2007).Electronic states of a hydrogenic donor impurity in semiconductor nano-structures.physics letters a,366(1-2),120-123. |
| MLA | Li SS ,et al."Electronic states of a hydrogenic donor impurity in semiconductor nano-structures".physics letters a 366.1-2(2007):120-123. |
入库方式： OAI收割
来源：半导体研究所
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