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Effect of heavy boron doping on the electrical characteristics of SiGeHBTs
文献类型：期刊论文
| 作者 | Yao F (Yao Fei) ; Xue CL (Xue Chun-Lai) ; Cheng BW (Cheng Bu-Wen) ; Wang QM (Wang Qi-Ming) |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2007 |
| 卷号 | 22期号:8页码:890-895 |
| 关键词 | HETEROJUNCTION BIPOLAR-TRANSISTORS |
| ISSN号 | issn: 0268-1242 |
| 通讯作者 | yao, f, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: sindy-yf@semi.ac.cn |
| 中文摘要 | a modified version of the jain-roulston (j-r) model is developed that takes into account the compensation effect of b to ge in strained sige layers for the first time. based on this new model, the distribution of the bandgap narrowing (bgn) between the conduction and valence bands is calculated. the influence of this distribution on the transport characteristics of abrupt sige heterojunction bipolar transistors (hbts) has been further considered by using the tunnelling and thermionic emission mechanisms instead of the drift and diffusion mechanisms at the interfaces where discontinuities in energy levels appear. the results show that our modified j-r model better fits the experimental values, and the energy band structure has a strong influence on electrical characteristics. |
| 英文摘要 | a modified version of the jain-roulston (j-r) model is developed that takes into account the compensation effect of b to ge in strained sige layers for the first time. based on this new model, the distribution of the bandgap narrowing (bgn) between the conduction and valence bands is calculated. the influence of this distribution on the transport characteristics of abrupt sige heterojunction bipolar transistors (hbts) has been further considered by using the tunnelling and thermionic emission mechanisms instead of the drift and diffusion mechanisms at the interfaces where discontinuities in energy levels appear. the results show that our modified j-r model better fits the experimental values, and the energy band structure has a strong influence on electrical characteristics.; 于2010-03-29批量导入; 于2010-03-29批量导入; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 ; 2010-10-15 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9364]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yao F ,Xue CL ,Cheng BW ,et al. Effect of heavy boron doping on the electrical characteristics of SiGeHBTs[J]. semiconductor science and technology,2007,22(8):890-895. |
| APA | Yao F ,Xue CL ,Cheng BW ,&Wang QM .(2007).Effect of heavy boron doping on the electrical characteristics of SiGeHBTs.semiconductor science and technology,22(8),890-895. |
| MLA | Yao F ,et al."Effect of heavy boron doping on the electrical characteristics of SiGeHBTs".semiconductor science and technology 22.8(2007):890-895. |
入库方式： OAI收割
来源：半导体研究所
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