Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants
文献类型：期刊论文
| 作者 | Xu Q (Xu Qiang) ; Luo JW (Luo Jun-Wei) ; Li SS (Li Shu-Shen) ; Xia JB (Xia Jian-Bai) ; Li JB (Li Jingbo) ; Wei SH (Wei Su-Huai) |
| 刊名 | physical review b
 |
| 出版日期 | 2007 |
| 卷号 | 75期号:23页码:art.no.235304 |
| 关键词 | POROUS SILICON |
| ISSN号 | issn: 1098-0121 |
| 通讯作者 | li, jb, acad sinica, state key lab superlattices & microstruct, inst semicond, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | using first-principles methods, we have systematically calculated the defect formation energies and transition energy levels of group-iii and group-v impurities doped in h passivated si quantum dots (qds) as functions of the qd size. the general chemical trends found in the qds are similar to that found in bulk si. we show that defect formation energy and transition energy level increase when the size of the qd decreases; thus, doping in small si qds becomes more difficult. b-si has the lowest acceptor transition energy level, and it is more stable near the surface than at the center of the h passivated si qd. on the other hand, p-si has the smallest donor ionization energy, and it prefers to stay at the interior of the h passivated si qd. we explained the general chemical trends and the dependence on the qd size in terms of the atomic chemical potentials and quantum confinement effects. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9366]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu Q ,Luo JW ,Li SS ,et al. Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants[J]. physical review b,2007,75(23):art.no.235304. |
| APA | Xu Q ,Luo JW ,Li SS ,Xia JB ,Li JB ,&Wei SH .(2007).Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants.physical review b,75(23),art.no.235304. |
| MLA | Xu Q ,et al."Chemical trends of defect formation in Si quantum dots: The case of group-III and group-V dopants".physical review b 75.23(2007):art.no.235304. |
入库方式： OAI收割
来源：半导体研究所
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