InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
文献类型：期刊论文
| 作者 | Gao FB (Gao Fubao) ; Chen NF (Chen NuoFu) ; Liu L (Liu Lei) ; Zhang XW (Zhang X. W.) ; Wu JL (Wu Jinliang) ; Yin ZG (Yin Zhigang) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 304期号:2页码:472-475 |
| 关键词 | crystal structure |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | gao, fb, chinese acad sci, inst semicond, key lab semicond mat sci, po box 912, beijing 100083, peoples r china. 电子邮箱地址: fbgao@semi.ac.cn |
| 中文摘要 | the growth of inasxsb1-x films on (100) gasb substrates by liquid-phase epitaxy (lpe) has been investigated and epitaxial inas0.3sb0.7 films with inas0.9sb0.09 buffer layers have been successfully obtained. the low x-ray rocking curve fhwm values of inas0.3sb0.7 layer shows the high quality of crystal-orientation structure. hall measurements show that the highest electron mobility in the samples obtained is 2.9 x 10(4) cm(2) v-1 s(-1) and the carrier density is 2.78 x 10(16)cm(-3) at room temperature (rt). the in as0.3sb0.7 films grown on (10 0) gasb substrates exhibit excellent optical performance with a cut-off wavelength of 12 mu m. (c) 2007 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9380]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao FB ,Chen NF ,Liu L ,et al. InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy[J]. journal of crystal growth,2007,304(2):472-475. |
| APA | Gao FB ,Chen NF ,Liu L ,Zhang XW ,Wu JL ,&Yin ZG .(2007).InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy.journal of crystal growth,304(2),472-475. |
| MLA | Gao FB ,et al."InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy".journal of crystal growth 304.2(2007):472-475. |
入库方式： OAI收割
来源：半导体研究所
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