Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems
文献类型：期刊论文
| 作者 | Zhou WZ (Zhou Wen-Zheng) ; Lin T (Lin Tie) ; Shang LY (Shang Li-Yan) ; Huang ZM (Huang Zhi-Ming) ; Cui LJ (Cui Li-Jie) ; Li DL (Li Dong-Lin) ; Gao HL (Gao Hong-Ling) ; Zeng YP (Zeng Yi-Pine) ; Guo SL (Guo Shao-Ling) ; Gui YS (Gui Yong-Sheng) ; Chu JH (Chu Jun-Hao) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:7页码:4099-4104 |
| 关键词 | In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | zhou, wz, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china. 电子邮箱地址: jhchu@mail.sitp.ac.en |
| 中文摘要 | magneto-transport measurements have been carried out on three heavily si delta-doped in-0.52 al-0.48 as/in-0.53 ga-0.47 as/in-0.52 a(10.48) as single quantum well samples in which two subbands were occupied by electrons. the weak anti-localization (wal) has been found in such high electron mobility systems. the strong rashba spin-orbit (so) coupling is due to the high structure inversion asymmetry (sia) of the quantum wells. since the wal theory model is so complicated in fitting our experimental results, we obtained the rashba so coupling constant alpha and the zero-field spin splitting delta(0) by an approximate approach. the results are consistent with that obtained by the shubnikov-de haas (sdh) oscillation analysis. the wal effect in high electron mobility system suggests that finding a useful approach for deducing alpha and delta(0) is important in designing future spintronics devices that utilize the rashba so coupling. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9386]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou WZ ,Lin T ,Shang LY ,et al. Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems[J]. acta physica sinica,2007,56(7):4099-4104. |
| APA | Zhou WZ .,Lin T .,Shang LY .,Huang ZM .,Cui LJ .,...&Chu JH .(2007).Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems.acta physica sinica,56(7),4099-4104. |
| MLA | Zhou WZ ,et al."Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems".acta physica sinica 56.7(2007):4099-4104. |
入库方式： OAI收割
来源：半导体研究所
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