Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers
文献类型：期刊论文
| 作者 | Zhou WZ (Zhou Wen-Zheng) ; Lin T (Lin Tie) ; Shang LY (Shang Li-Yan) ; Huang ZM (Huang Zhi-Ming) ; Zhu B (Zhu Bo) ; Cui LJ (Cui Li-Jie) ; Gao HL (Gao Hong-Ling) ; Li DL (Li Dong-Lin) ; Guo SL (Guo Shao-Ling) ; Gui YS (Gui Yong-Sheng) ; Chu JH (Chu Jun-Hao) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:7页码:4143-4147 |
| 关键词 | SdH oscillation |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | zhou, wz, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china. 电子邮箱地址: jhchu@mail.sitp.ac.cn |
| 中文摘要 | magneto-transport measurements have been carried out on a si delta-doped in0.65ga0.35as/in0.52al0.48as metamorphic high-electron-mobility transistor with inp substrate in a temperature range between 1.5 and 60 k under magnetic field up to 13 t. we studied the shubnikov-de haas (sdh) effect and the hall effect for the in0.65ga0.35as/in0.52al0.48as single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. we solve the schrodinger-kohn-sham equation in conjunction with the poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the fermi energy. the calculational results are well consistent with the results of experiments. both experimental and calculational results indicate that almost all of the delta-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 k. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9390]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou WZ ,Lin T ,Shang LY ,et al. Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers[J]. acta physica sinica,2007,56(7):4143-4147. |
| APA | Zhou WZ .,Lin T .,Shang LY .,Huang ZM .,Zhu B .,...&Chu JH .(2007).Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers.acta physica sinica,56(7),4143-4147. |
| MLA | Zhou WZ ,et al."Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers".acta physica sinica 56.7(2007):4143-4147. |
入库方式： OAI收割
来源：半导体研究所
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