中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction

文献类型:期刊论文

作者Shi WH (Shi Wenhua) ; Zhao L (Zhao Lei) ; Luo LP (Luo Liping) ; Wang QM (Wang Qiming)
刊名journal of materials science & technology
出版日期2007
卷号23期号:3页码:301-303
关键词X-ray diffraction
ISSN号issn: 1005-0302
通讯作者shi, wh, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: whshi@red.semi.ac.cn
中文摘要the fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal x-ray diffraction (dcxrd) pattern. it is found that the width of the 0(th) peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. by this method, the ge-si atomic interdiffusion in ge nano-dots and wetting layers has been investigated by dcxrd. it is found that thermal annealing can activate ge-si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. therefore the fluctuation of the ge layer decreases and the distribution of ge atoms becomes homogeneous in the horizontal ge (gesi actually) layer, which make the width of the 0(th) peak narrow after annealing.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-29
源URL[http://ir.semi.ac.cn/handle/172111/9394]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Shi WH ,Zhao L ,Luo LP ,et al. Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction[J]. journal of materials science & technology,2007,23(3):301-303.
APA Shi WH ,Zhao L ,Luo LP ,&Wang QM .(2007).Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction.journal of materials science & technology,23(3),301-303.
MLA Shi WH ,et al."Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction".journal of materials science & technology 23.3(2007):301-303.

入库方式: OAI收割

来源:半导体研究所

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