Enhanced performance of p-GaN by Mg delta doping
文献类型：期刊论文
| 作者 | Wang HB (Wang Huaibing) ; Liu JP (Liu Jianping) ; Niu NH (Niu Nanhui) ; Shen GD (Shen Guangdi) ; Zhang SM (Zhang Shuming) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 304期号:1页码:7-10 |
| 关键词 | delta doping |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | wang, hb, beijing univ technol, beijing optoelect technol lab, beijing 100022, peoples r china. 电子邮箱地址: wanghb328@gmail.com |
| 中文摘要 | the electrical and structural properties of mg delta-doped gan epilayers grown by mocvd were investigated. compared to uniform mg-doping gan layers, it has been shown that the delta-doping (delta-doping) process could suppress the dislocation density and enhance the p-type performance. the influence of pre-purge step on the structural properties of gan was also investigated. the hole concentration of p-gan decreases when using a pre-purge step. these results can be explained convincingly using a simple model of impurity incorporation under ga-free growth condition. (c) 2007 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9396]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HB ,Liu JP ,Niu NH ,et al. Enhanced performance of p-GaN by Mg delta doping[J]. journal of crystal growth,2007,304(1):7-10. |
| APA | Wang HB ,Liu JP ,Niu NH ,Shen GD ,&Zhang SM .(2007).Enhanced performance of p-GaN by Mg delta doping.journal of crystal growth,304(1),7-10. |
| MLA | Wang HB ,et al."Enhanced performance of p-GaN by Mg delta doping".journal of crystal growth 304.1(2007):7-10. |
入库方式： OAI收割
来源：半导体研究所
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