A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor
文献类型：期刊论文
| 作者 | Xue CL (Xue Chun-Lai) ; Yao F (Yao Fei) ; Shi WH (Shi Wen-Hua) ; Cheng BW (Cheng Bu-Wen) ; Wang HJ (Wang Hong-Jie) ; Yu JZ (Yu Jin-Zhong) ; Wang QM (Wang Qi-Ming) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:7页码:2125-2127 |
| ISSN号 | issn: 0256-307x |
| 关键词 | MOBILE COMMUNICATION |
| 通讯作者 | xue, cl, chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: clxue@semi.ac.cn |
| 中文摘要 | with a crystal orientation dependent on the etch rate of si in koh-based solution, a base-emitter self-aligned large-area multi-linger configuration power sige heterojunction bipolar transistor (hbt) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. the maximum dc current gain is 226.1. the collector-emitter junction breakdown voltage bvceo is 10 v and the collector-base junction breakdown voltage bvcbo is 16 v with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. the device exhibited a maximum oscillation frequency f(max) of 35.5 ghz and a cut-off frequency f(t) of 24.9 ghz at a dc bias point of i-c = 70 ma and the voltage between collector and emitter is v-ce = 3 v. load pull measurements in class-a operation of the sige hbt are performed at 1.9 ghz with input power ranging from 0 dbm to 21 dbm. a maximum output power of 29.9 dbm (about 977 mw) is obtained at an input power of 18.5 dbm with a gain of 11.47 db. compared to a non-self-aligned sige hbt with the same heterostructure and process, f(max) and f(t) are improved by about 83.9% and 38.3%, respectively. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9420]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xue CL ,Yao F ,Shi WH ,et al. A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor[J]. chinese physics letters,2007,24(7):2125-2127. |
| APA | Xue CL .,Yao F .,Shi WH .,Cheng BW .,Wang HJ .,...&Wang QM .(2007).A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor.chinese physics letters,24(7),2125-2127. |
| MLA | Xue CL ,et al."A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor".chinese physics letters 24.7(2007):2125-2127. |
入库方式： OAI收割
来源：半导体研究所
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