High-power electroabsorption modulator using intrastep quantum well
文献类型：期刊论文
| 作者 | Cheng YB (Cheng Yuan-Bing) ; Pan JQ (Pan Jiao-Qing) ; Zhou F (Zhou Fan) ; Zhu HL (Zhu Hong-Liang) ; Zhao LJ (Zhao Ling-Juan) ; Wang W (Wang Wei) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:7页码:2128-2130 |
| 关键词 | SATURATION |
| ISSN号 | issn: 0256-307x |
| 通讯作者 | cheng, yb, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: ybcheng@semi.ac.cn |
| 中文摘要 | an electroabsorption modulator using the intrastep quantum well (iqw) active region is fabricated for optical network systems. the strain-compensated ingaasp/ingaasp iqw shows good material quality and improved modulation properties, high extinction ratio elliciency 10 db/v and low capacitance (< 0.42 pf), with which an ultra high frequency (> 15 ghz) can be obtained. high-speed measurement under high-power excitation shows no power saturation up to excitation power of 21 dbm. to our knowledge, the input optical power is the highest reported for multi-quantum well eams without heat sinks. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9422]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Cheng YB ,Pan JQ ,Zhou F ,et al. High-power electroabsorption modulator using intrastep quantum well[J]. chinese physics letters,2007,24(7):2128-2130. |
| APA | Cheng YB ,Pan JQ ,Zhou F ,Zhu HL ,Zhao LJ ,&Wang W .(2007).High-power electroabsorption modulator using intrastep quantum well.chinese physics letters,24(7),2128-2130. |
| MLA | Cheng YB ,et al."High-power electroabsorption modulator using intrastep quantum well".chinese physics letters 24.7(2007):2128-2130. |
入库方式： OAI收割
来源：半导体研究所
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