Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors
文献类型：期刊论文
| 作者 | Zhang WC (Zhang Wancheng) ; Nishiguchi K (Nishiguchi Katsuhiko) ; Ono Y (Ono Yukinori) ; Fujiwara A (Fujiwara Akira) ; Yamaguchi H (Yamaguchi Hiroshi) ; Inokawa H (Inokawa Hiroshi) ; Takahashi Y (Takahashi Yasuo) ; Wu, NJ (Wu, Nan-Jian) |
| 刊名 | ieice transactions on electronics
 |
| 出版日期 | 2007 |
| 卷号 | e90c期号:5页码:943-948 |
| 关键词 | single-electron |
| ISSN号 | issn: 0916-8524 |
| 通讯作者 | zhang, wc, ntt, basic res labs, atsugi, kanagawa 2430198, japan. 电子邮箱地址: knishi50@aecl.ntt.co.jp |
| 中文摘要 | a single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. the turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (mosfets) alternately, allows current quantization at 20 k due to single-electron transfer. another mosfet is placed at the drain side of the turnstile to form an electron storage island. therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. the correspondence between the quantized current and the single-electron counting was confirmed. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9426]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang WC ,Nishiguchi K ,Ono Y ,et al. Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors[J]. ieice transactions on electronics,2007,e90c(5):943-948. |
| APA | Zhang WC .,Nishiguchi K .,Ono Y .,Fujiwara A .,Yamaguchi H .,...&Wu, NJ .(2007).Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors.ieice transactions on electronics,e90c(5),943-948. |
| MLA | Zhang WC ,et al."Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors".ieice transactions on electronics e90c.5(2007):943-948. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。