Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well
文献类型：期刊论文
| 作者 | Zhou WZ ; Huang ZM ; Qiu ZJ ; Lin T ; Shang LY ; Li DL ; Gao HL ; Cui LJ ; Zeng YP ; Guo SL ; Gui YS ; Dai N ; Chu JH |
| 刊名 | solid state communications
 |
| 出版日期 | 2007 |
| 卷号 | 142期号:7页码:393-397 |
| 关键词 | quantum wells |
| ISSN号 | issn: 0038-1098 |
| 通讯作者 | chu, jh, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china. 电子邮箱地址: jhchu@mail.sitp.ac.cn |
| 中文摘要 | magneto-transport measurements have been carried out on double/single-barrier-doped in0.52al0.48as/in0.53ga0.47as/in0.52al0.48as quantum well samples from 1.5 to 60 k in an applied magnetic field up to 13 t. beating shubnikov-de haas oscillation is observed for the symmetrically double-barrier-doped sample and demonstrated due to a symmetric state and an antisymmetric state confined in two coupled self-consistent potential wells in the single quantum well. the energy separation between the symmetric and the antisymmetric states for the double-barrier-doped sample is extracted from experimental data, which is consistent with calculation. for the single-barrier-doped sample, only beating related to magneto-intersubband scattering shows up. the pesudospin property of the symmetrically double-barrier-doped single quantum well shows that it is a good candidate for fabricating quantum transistors. (c) 2007 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9428]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou WZ,Huang ZM,Qiu ZJ,et al. Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well[J]. solid state communications,2007,142(7):393-397. |
| APA | Zhou WZ.,Huang ZM.,Qiu ZJ.,Lin T.,Shang LY.,...&Chu JH.(2007).Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well.solid state communications,142(7),393-397. |
| MLA | Zhou WZ,et al."Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well".solid state communications 142.7(2007):393-397. |
入库方式： OAI收割
来源：半导体研究所
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