The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer
文献类型：期刊论文
| 作者 | Zhang SM ; Yang H; Zhu JJ; Jiang DS; Yang H; Zhao DG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 303期号:2页码:414-418 |
| 关键词 | V/III ratio |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dgzhao@red.semi.ac.cn |
| 中文摘要 | the v/iii ratio in the initial growth stage of metalorganic chemical vapor deposition has an important influence on the quality of a gan epilayer grown on a low-temperature ain buffer layer and c-plane sapphire substrate. a weaker yellow luminescence, a narrower half-width of the x-ray diffraction peak, and a higher electron mobility result when a lower v/iii ratio is taken. the intensity of in situ optical reflectivity measurements indicates that the film surface is rougher at the beginning of gan growth, and a longer time is needed for the islands to coalesce and for a quasi-two dimensional mode growth to start. a comparison of front- and back-illuminated photoluminescence spectra confirms that many threading dislocations are bent during the initial stage, leading to a better structural quality of the gan layer. (c) 2007 elsevier b.v. all rights reserved. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9434]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang SM,Yang H,Zhu JJ,et al. The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer[J]. journal of crystal growth,2007,303(2):414-418. |
| APA | Zhang SM,Yang H,Zhu JJ,Jiang DS,Yang H,&Zhao DG.(2007).The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer.journal of crystal growth,303(2),414-418. |
| MLA | Zhang SM,et al."The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer".journal of crystal growth 303.2(2007):414-418. |
入库方式： OAI收割
来源：半导体研究所
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