Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition
文献类型：期刊论文
| 作者 | Yang H; Yang H; Zhao DG ; Jiang DS
|
| 刊名 | journal of physics-condensed matter
 |
| 出版日期 | 2007 |
| 卷号 | 19期号:17页码:art.no.176005 |
| 关键词 | SAPPHIRE |
| ISSN号 | issn: 0953-8984 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wxl@mail.semi.ac.cn |
| 中文摘要 | the a1 compositional distribution of a1gan is investigated by cathodoluminescence (cl). monochromatic cl images and cl spectra reveal a lateral a1 compositional inhomogeneity, which corresponds to surface hexagonal patterns. cross-sectional cl images show a relatively uniform al compositional distribution in the growth direction, indicating columnar growth mode of a1gan films. in addition, a thin a1gan layer with lower al composition is grown on top of the buffer a1n layer near the bottom of the a1gan epilayer because of the larger lateral mobility of ga adatoms on the growth surface and their accumulation at the grain boundaries. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9446]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang H,Yang H,Zhao DG,et al. Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition[J]. journal of physics-condensed matter,2007,19(17):art.no.176005. |
| APA | Yang H,Yang H,Zhao DG,&Jiang DS.(2007).Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition.journal of physics-condensed matter,19(17),art.no.176005. |
| MLA | Yang H,et al."Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal-organic chemical vapour deposition".journal of physics-condensed matter 19.17(2007):art.no.176005. |
入库方式： OAI收割
来源：半导体研究所
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