Spin relaxation dynamics in InAs monolayer and submonolayer
文献类型：期刊论文
| 作者 | Sun Z (Sun Zheng) ; Xu ZY (Xu Zhong-Ying) ; Ruan XZ (Ruan Xue-Zhong) ; Ji Y (Ji Yang) ; Sun BQ (Sun Bao-Quan) ; Ni HQ (Ni Hai-Qiao) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:5页码:2958-2961 |
| 关键词 | InAs submonolayer |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | sun, z, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: sz3288@red.semi.ac.cn |
| 中文摘要 | by using time-resolved photoluminescence and time-resolved kerr rotation, we have studied the unique electron spin dynamics in inas monolayer (ml) and submonolayer (sml), which were sandwiched in gaas matrix. under non-resonant excitation, the spin relaxation lifetimes of 3.4 ns and 0.48 ns were observed for 1/3 ml and i ml inas samples, respectively. more interestingly, the spin lifetime of the 1/3 ml inas decreased dramatically under resonant excitation, down to 70 ps, while the spin lifetime of the 1 ml sample did not vary much, changing only from 400 to 340 ps. these interesting results come from the different electron-hole interactions caused by different spatial electron-hole correlation, and they provide a direct evidence of the dominant spin relaxation process, i.e. the bap mechanism. furthermore, these new results may provide a valuable enlightenment in controlling the spin relaxation and in seeking new material systems for spintronics application. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9466]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun Z ,Xu ZY ,Ruan XZ ,et al. Spin relaxation dynamics in InAs monolayer and submonolayer[J]. acta physica sinica,2007,56(5):2958-2961. |
| APA | Sun Z ,Xu ZY ,Ruan XZ ,Ji Y ,Sun BQ ,&Ni HQ .(2007).Spin relaxation dynamics in InAs monolayer and submonolayer.acta physica sinica,56(5),2958-2961. |
| MLA | Sun Z ,et al."Spin relaxation dynamics in InAs monolayer and submonolayer".acta physica sinica 56.5(2007):2958-2961. |
入库方式： OAI收割
来源：半导体研究所
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