Effect of heavily doped boron on bandgap narrowing of strained SiGe layers
文献类型：期刊论文
| 作者 | Yao F (Yao Fei) ; Xue CL (Xue Chun-Lai) ; Cheng BW (Cheng Bu-Wen) ; Wang QM (Wang Qi-Ming) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:6页码:1686-1689 |
| 关键词 | TRANSISTORS |
| ISSN号 | issn: 0256-307x |
| 通讯作者 | yao, f, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: sindy-yf@semi.ac.cn |
| 中文摘要 | taking into account the compensation effect of b to ge in strained sige layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained sige layers is calculated, and the classical jain-roulston (j-r) model is modified. the results show that our modified j-r model well fits the experimental values. based on the modified j-r model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of sige heterojunction bipolar transistors. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9474]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yao F ,Xue CL ,Cheng BW ,et al. Effect of heavily doped boron on bandgap narrowing of strained SiGe layers[J]. chinese physics letters,2007,24(6):1686-1689. |
| APA | Yao F ,Xue CL ,Cheng BW ,&Wang QM .(2007).Effect of heavily doped boron on bandgap narrowing of strained SiGe layers.chinese physics letters,24(6),1686-1689. |
| MLA | Yao F ,et al."Effect of heavily doped boron on bandgap narrowing of strained SiGe layers".chinese physics letters 24.6(2007):1686-1689. |
入库方式： OAI收割
来源：半导体研究所
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