Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition
文献类型：期刊论文
| 作者 | Zhao YM (Zhao Yong-Mei) ; Sun GS (Sun Guo-Sheng) ; Li JY (Li Jia-Ye) ; Liu XF (Liu Xing-Fang) ; Wang L (Wang Lei) ; Zhao WS (Zhao Wan-Shun) ; Li JM (Li Jin-Min) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:6页码:1753-1755 |
| ISSN号 | issn: 0256-307x |
| 关键词 | SUBSTRATE |
| 通讯作者 | zhao, ym, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china. 电子邮箱地址: ymzhao@semi.ac.cn |
| 中文摘要 | a novel 10-period sic/aln multilayered structure with a sic cap layer is prepared by low pressure chemical vapour deposition (lpcvd). the structure with total film thickness of about 1.45 mu m is deposited on a si (111) substrate and shows good surface morphology with a smaller rms surface roughness of 5.3 nm. according to the secondary ion mass spectroscopy results, good interface of the 10 period sic/aln structure and periodic changes of depth profiles of c, si, al, n components are obtained by controlling the growth procedure. the structure exhibits the peak reflectivity close to 30% near the wavelength of 322 nm. to the best of our knowledge, this is the first report of growth of the sic/aln periodic structure using the home-made lpcvd system. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9484]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao YM ,Sun GS ,Li JY ,et al. Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition[J]. chinese physics letters,2007,24(6):1753-1755. |
| APA | Zhao YM .,Sun GS .,Li JY .,Liu XF .,Wang L .,...&Li JM .(2007).Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition.chinese physics letters,24(6),1753-1755. |
| MLA | Zhao YM ,et al."Growth of a novel periodic structure of SiC/AlN multilayers by low pressure chemical vapour deposition".chinese physics letters 24.6(2007):1753-1755. |
入库方式： OAI收割
来源：半导体研究所
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