Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure
文献类型:期刊论文
作者 | Zhu, H (Zhu Hui) ; Zheng, HZ (Zheng Hou-Zhi) ; Li, GR (Li Gui-Rong) ; Tan, PH (Tan Ping-Heng) ; Gan, HD (Gan Hua-Dong) ; Xu, P (Xu Ping) ; Zhang, F (Zhang Fei) ; Zhang, H (Zhang Hao) ; Xiao, WB (Xiao Wen-Bo) ; Sun, XM (Sun Xiao-Ming) |
刊名 | journal of infrared and millimeter waves
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出版日期 | 2007 |
卷号 | 26期号:2页码:81-84 |
关键词 | photo-excitation |
ISSN号 | issn: 1001-9014 |
通讯作者 | zhu, h, chinese acad sci, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china. |
中文摘要 | by integrating a resonant tunneling diode with a 1.2 mu m-thick slightly doped n-type gaas layer in a three-barrier, two-well resonant tunneling structure, the resonant tunneling of photo-excited holes exhibits a value of peak-to-valley current ratio (pvcr) as high as 36. a vast number of photo-excited holes generated in this 1.2 mu m-thick slightly doped n-type gaas layer, and the quantization of hole levels in a 23nm-thick quantum well on the outgoing side of hole tunneling out off the resonant tunneling diode which greatly depressed the valley current of the holes, are thought to be responsible for such greatly enhanced pvcr. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-29 |
源URL | [http://ir.semi.ac.cn/handle/172111/9486] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhu, H ,Zheng, HZ ,Li, GR ,et al. Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure[J]. journal of infrared and millimeter waves,2007,26(2):81-84. |
APA | Zhu, H .,Zheng, HZ .,Li, GR .,Tan, PH .,Gan, HD .,...&Sun, XM .(2007).Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure.journal of infrared and millimeter waves,26(2),81-84. |
MLA | Zhu, H ,et al."Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure".journal of infrared and millimeter waves 26.2(2007):81-84. |
入库方式: OAI收割
来源:半导体研究所
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