中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure

文献类型:期刊论文

作者Zhu, H (Zhu Hui) ; Zheng, HZ (Zheng Hou-Zhi) ; Li, GR (Li Gui-Rong) ; Tan, PH (Tan Ping-Heng) ; Gan, HD (Gan Hua-Dong) ; Xu, P (Xu Ping) ; Zhang, F (Zhang Fei) ; Zhang, H (Zhang Hao) ; Xiao, WB (Xiao Wen-Bo) ; Sun, XM (Sun Xiao-Ming)
刊名journal of infrared and millimeter waves
出版日期2007
卷号26期号:2页码:81-84
关键词photo-excitation
ISSN号issn: 1001-9014
通讯作者zhu, h, chinese acad sci, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china.
中文摘要by integrating a resonant tunneling diode with a 1.2 mu m-thick slightly doped n-type gaas layer in a three-barrier, two-well resonant tunneling structure, the resonant tunneling of photo-excited holes exhibits a value of peak-to-valley current ratio (pvcr) as high as 36. a vast number of photo-excited holes generated in this 1.2 mu m-thick slightly doped n-type gaas layer, and the quantization of hole levels in a 23nm-thick quantum well on the outgoing side of hole tunneling out off the resonant tunneling diode which greatly depressed the valley current of the holes, are thought to be responsible for such greatly enhanced pvcr.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-29
源URL[http://ir.semi.ac.cn/handle/172111/9486]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhu, H ,Zheng, HZ ,Li, GR ,et al. Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure[J]. journal of infrared and millimeter waves,2007,26(2):81-84.
APA Zhu, H .,Zheng, HZ .,Li, GR .,Tan, PH .,Gan, HD .,...&Sun, XM .(2007).Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure.journal of infrared and millimeter waves,26(2),81-84.
MLA Zhu, H ,et al."Greatly enhanced resonant tunneling of photo-excited holes in a three-barrier resonant tunneling structure".journal of infrared and millimeter waves 26.2(2007):81-84.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。