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Quantum measurement characteristics of a double-dot single electron transistor

文献类型:期刊论文

作者Jiao, HJ (Jiao, HuJun) ; Li, XQ (Li, Xin-Qi) ; Luo, JY (Luo, JunYan)
刊名physical review b
出版日期2007
卷号75期号:15页码:art.no.155333
关键词TRANSPORT
ISSN号issn: 1098-0121
通讯作者jiao, hj, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jiaohujun@semi.ac.cn ; xqli@red.semi.ac.cn
中文摘要owing to a few unique advantages, the double-dot single electron transistor has been proposed as an alternative detector for charge states. in this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. it is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. the quantum measurement efficiency is also analyzed by comparing the measurement time with the measurement-induced dephasing time.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-29
源URL[http://ir.semi.ac.cn/handle/172111/9490]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Jiao, HJ ,Li, XQ ,Luo, JY . Quantum measurement characteristics of a double-dot single electron transistor[J]. physical review b,2007,75(15):art.no.155333.
APA Jiao, HJ ,Li, XQ ,&Luo, JY .(2007).Quantum measurement characteristics of a double-dot single electron transistor.physical review b,75(15),art.no.155333.
MLA Jiao, HJ ,et al."Quantum measurement characteristics of a double-dot single electron transistor".physical review b 75.15(2007):art.no.155333.

入库方式: OAI收割

来源:半导体研究所

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