Stark and rashba effects in GaN nanowires
文献类型：期刊论文
| 作者 | Zhang, XW (Zhang, X. W.) ; Xia, JB (Xia, J. B.) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2007 |
| 卷号 | 101期号:8页码:art.no.084305 |
| 关键词 | SPONTANEOUS POLARIZATION |
| ISSN号 | issn: 0021-8979 |
| 通讯作者 | zhang, xw, chinese ctr adv sci & technol, world lab, pob 8730, beijing 100080, peoples r china. |
| 中文摘要 | the effects of an external electric field on the electronic structure of gan nanowires, as well as gaas nanowires for comparison, are investigated theoretically. it is found that there is an anti-crossing effect in gan nanowires caused by a small electric field, the hole energy levels, hole wave functions, and optical oscillator strengths change dramatically when the radius (r) is around a critical radius (r-c), while this effect is absent in gaas nanowires. when r is slightly smaller than r-c, the highest hole states are optically dark in the absence of the electric field, and a small electric field can change them to be optically bright, due to the coupling of hole states brought by the field. the rashba spin-orbit effect is also studied. the electron rashba coefficient alpha increases linearly with the electric field. while the hole rashba coefficients beta do not increase linearly, but have complicated relationships with the electric field. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9494]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang, XW ,Xia, JB . Stark and rashba effects in GaN nanowires[J]. journal of applied physics,2007,101(8):art.no.084305. |
| APA | Zhang, XW ,&Xia, JB .(2007).Stark and rashba effects in GaN nanowires.journal of applied physics,101(8),art.no.084305. |
| MLA | Zhang, XW ,et al."Stark and rashba effects in GaN nanowires".journal of applied physics 101.8(2007):art.no.084305. |
入库方式： OAI收割
来源：半导体研究所
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