Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Ni, HQ (Ni, H. Q.) ; Niu, ZC (Niu, Z. C.) ; Fang, ZD (Fang, Z. D.) ; Huang, SS (Huang, S. S.) ; Zhang, SY (Zhang, S. Y.) ; Wu, DH (Wu, D. H.) ; Shun, Z (Shun, Z.) ; Han, Q (Han, Q.) ; Wu, RH (Wu, R. H.) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 301期号:0页码:125-128 |
| 关键词 | quantum wells |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | ni, hq, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: nihq@red.semi.ac.cn |
| 中文摘要 | the inganas(sb)/(ganas)/gaas quantum wells (qws) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (mbe). the parameters of the radio frequency (rf) such as rf power and flow rate are optimized to reduce the damages from the ions or energetic species. the growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. the effects of sb on the wavelength and quality are investigated. the ganas barrier is used to extend the wavelength and reduce the strain. a 1.5865 mu m inganas(sb)/ganas sqw edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9510]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ni, HQ ,Niu, ZC ,Fang, ZD ,et al. Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy[J]. journal of crystal growth,2007,301(0):125-128. |
| APA | Ni, HQ .,Niu, ZC .,Fang, ZD .,Huang, SS .,Zhang, SY .,...&Wu, RH .(2007).Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy.journal of crystal growth,301(0),125-128. |
| MLA | Ni, HQ ,et al."Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy".journal of crystal growth 301.0(2007):125-128. |
入库方式： OAI收割
来源：半导体研究所
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