Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Tangring, I (Tangring, I.) ; Wang, SM (Wang, S. M.) ; Sadeghi, M (Sadeghi, M.) ; Larsson, A (Larsson, A.) ; Wang, XD (Wang, X. D.) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 301期号:0页码:971-974 |
| 关键词 | metamorphic growth |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | tangring, i, chalmers, dept microtechnol & nanosci, s-41296 gothenburg, sweden. 电子邮箱地址: ivar.tangring@mc2.chalmers.se |
| 中文摘要 | we demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on gaas by molecular beam epitaxy (mbe) using an alloy-graded buffer layer (gbl). use of be in the gbl is effective to reduce surface/interface roughness and improves optical quality. the rms surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1 x 1 mu m(2). cross-sectional transmission electron microscopy (tem) images confirm that most dislocations are blocked in the gbl. ridge waveguide lasers with 4 mu m wide ridge were fabricated and characterized. the average threshold current under the pulsed excitation is in 170-200 ma for a cavity length of 0.9-1.5 mm. this value can be further reduced to about 100 ma by high-reflectivity coating. lasers can work in an ambient temperature up to at least 50 degrees c. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9514]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Tangring, I ,Wang, SM ,Sadeghi, M ,et al. Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy[J]. journal of crystal growth,2007,301(0):971-974. |
| APA | Tangring, I ,Wang, SM ,Sadeghi, M ,Larsson, A ,&Wang, XD .(2007).Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy.journal of crystal growth,301(0),971-974. |
| MLA | Tangring, I ,et al."Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy".journal of crystal growth 301.0(2007):971-974. |
入库方式： OAI收割
来源：半导体研究所
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