中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy

文献类型:期刊论文

作者Zhao, H (Zhao, H.) ; Xu, YQ (Xu, Y. Q.) ; Ni, HQ (Ni, H. Q.) ; Zhang, SY (Zhang, S. Y.) ; Han, Q (Han, Q.) ; Du, Y (Du, Y.) ; Yang, XH (Yang, X. H.) ; Wu, RH (Wu, R. H.) ; Niu, ZC (Niu, Z. C.)
刊名journal of crystal growth
出版日期2007
卷号301期号:0页码:979-983
关键词photoluminescence
ISSN号issn: 0022-0248
通讯作者zhao, h, chinese acad sci, inst semicond, natl lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zhaohuan@red.semi.ac.cn
中文摘要rapid thermal annealing (rta) has been demonstrated as an effective way to improve the crystal quality of gainnas(sb) quantum wells (qws). however, few investigations have been made into its application in laser growth and fabrication. we have fabricated 1.3 mu m gainnas lasers, both as -grown and with post-growth rta. enhanced photoluminescence (pl) intensity and decreased threshold current are obtained with rta, but the characteristic temperature t-o and slope efficiency deteriorate. furthermore, t-o has an abnormal dependence on the cavity length. we attribute these problems to the deterioration of the wafer's surface. rta with deposition of sio2 was performed to avoid this deterioration, t-o was improved over the samples that underwent rta without sio2. post-growth and in situ annealing were also investigated in a 1.55 mu m gainnassb system. finally, continuous operation at room temperature of a gaas-based dilute nitride laser with a wavelength over 1.55 mu m was realized by introducing an in situ annealing process. (c) 2007 elsevier b.v. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-03-29
源URL[http://ir.semi.ac.cn/handle/172111/9516]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhao, H ,Xu, YQ ,Ni, HQ ,et al. Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy[J]. journal of crystal growth,2007,301(0):979-983.
APA Zhao, H .,Xu, YQ .,Ni, HQ .,Zhang, SY .,Han, Q .,...&Niu, ZC .(2007).Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy.journal of crystal growth,301(0),979-983.
MLA Zhao, H ,et al."Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy".journal of crystal growth 301.0(2007):979-983.

入库方式: OAI收割

来源:半导体研究所

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