Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings
文献类型：期刊论文
| 作者 | Ding, F (Ding, Fei) ; Wang, LJ (Wang, Lijuan) ; Kiravittaya, S (Kiravittaya, Suwit) ; Muller, E (Mueller, Elisabeth) ; Rastelli, A (Rastelli, Armando) ; Schmidt, OG (Schmidt, Oliver G.) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:17页码:art.no.173104 |
| 关键词 | SELF-ASSEMBLED NANOHOLES |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | ding, f, max planck inst festkorperforsch, heisenbergerstr 1, d-70569 stuttgart, germany. 电子邮箱地址: f.ding@fkf.mpg.de |
| 中文摘要 | the three-dimensional morphology of in(ga)as nanostructures embedded in a gaas matrix is investigated by combining atomic force microscopy and removal of the gaas cap layer by selective wet etching. this method is used to investigate how the morphology of in(ga)as quantum dots changes upon gaas capping and subsequent in situ etching with asbr3. a wave function calculation based on the experimentally determined morphologies suggests that quantum dots transform into quantum rings during in situ etching. (c) 2007 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9518]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ding, F ,Wang, LJ ,Kiravittaya, S ,et al. Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings[J]. applied physics letters,2007,90(17):art.no.173104. |
| APA | Ding, F ,Wang, LJ ,Kiravittaya, S ,Muller, E ,Rastelli, A ,&Schmidt, OG .(2007).Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings.applied physics letters,90(17),art.no.173104. |
| MLA | Ding, F ,et al."Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings".applied physics letters 90.17(2007):art.no.173104. |
入库方式： OAI收割
来源：半导体研究所
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