Giant and zero electron g factors of dilute nitride semiconductor nanowires
文献类型：期刊论文
| 作者 | Zhang XW ; Fan WJ ; Li SS ; Xia JB |
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:19页码:art.no.193111 |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | zhang, xw, nanyang technol univ, sch elect & elect engn, singapore 639798, singapore. 电子邮箱地址: ewjfan@ntu.edu.sg |
| 中文摘要 | the electronic structures and electron g factors of insb1-sns and gaas1-sns nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k.p model. the nitrogen doping has direct and indirect effects on the g factors. a giant g factor with absolute value larger than 900 is found in insb1-sns bulk material. a transverse electric field can increase the g factors, which has obviously asymmetric effects on the g factors in different directions. an electric field tunable zero g factor is found in gaas1-sns nanowires. (c) 2007 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9530]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang XW,Fan WJ,Li SS,et al. Giant and zero electron g factors of dilute nitride semiconductor nanowires[J]. applied physics letters,2007,90(19):art.no.193111. |
| APA | Zhang XW,Fan WJ,Li SS,&Xia JB.(2007).Giant and zero electron g factors of dilute nitride semiconductor nanowires.applied physics letters,90(19),art.no.193111. |
| MLA | Zhang XW,et al."Giant and zero electron g factors of dilute nitride semiconductor nanowires".applied physics letters 90.19(2007):art.no.193111. |
入库方式： OAI收割
来源：半导体研究所
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