Extremely low density InAs quantum dots with no wetting layer
文献类型：期刊论文
| 作者 | Huang, SS (Huang She-Song) ; Niu, ZC (Niu Zhi-Chuan) ; Ni, HQ (Ni Hai-Qiao) ; Zhan, F (Zhan Feng) ; Zhao, H (Zhao Huan) ; Sun, Z (Sun Zheng) ; Xia, JB (Xia Jian-Bai) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:4页码:1025-1028 |
| 关键词 | DROPLET EPITAXY |
| ISSN号 | issn: 0256-307x |
| 通讯作者 | niu, zc, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: zcniu@semi.ac.cn |
| 中文摘要 | extremely low density inas quantum dots (qds) are grown by molecular beam droplet epitaxy, the gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the gaas substrate surface during growth, and low density inas/gaas qds (4x10(6) cm(-2)) are formed by depositing 0.65 monolayers (ml) of indium. this is much less than the critical deposition thickness (1.7 ml), which is necessary to form inas/gaas qds with the conventional stranski-krastanov growth mode. the narrow photoluminescence line-width of about 24 mev is insensitive to cryostat temperatures from 10 k to 250 k. all measurements indicate that there is no wetting layer connecting the qds. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9534]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Huang, SS ,Niu, ZC ,Ni, HQ ,et al. Extremely low density InAs quantum dots with no wetting layer[J]. chinese physics letters,2007,24(4):1025-1028. |
| APA | Huang, SS .,Niu, ZC .,Ni, HQ .,Zhan, F .,Zhao, H .,...&Xia, JB .(2007).Extremely low density InAs quantum dots with no wetting layer.chinese physics letters,24(4),1025-1028. |
| MLA | Huang, SS ,et al."Extremely low density InAs quantum dots with no wetting layer".chinese physics letters 24.4(2007):1025-1028. |
入库方式： OAI收割
来源：半导体研究所
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