Quantum mechanical effects in nanometer field effect transistors
文献类型：期刊论文
| 作者 | Luo, JW (Luo, Jun-Wei) ; Li, SS (Li, Shu-Shen) ; Xia, JB (Xia, Jian-Bai) ; Wang, LW (Wang, Lin-Wang) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:14页码:art.no.143108 |
| 关键词 | PARTICLE POINT |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | luo, jw, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: lwwang@lbl.gov |
| 中文摘要 | the atomistic pseudopotential quantum mechanical calculations for million atom nanosized metal-oxide-semiconductor field-effect transistors (mosfets) are presented. when compared with semiclassical thomas-fermi simulation results, there are significant differences in i-v curve, electron threshold voltage, and gate capacitance. in many aspects, the quantum mechanical effects exacerbate the problems encountered during device minimization, and it also presents different mechanisms in controlling the behaviors of a nanometer device than the classical one. (c) 2007 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9548]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo, JW ,Li, SS ,Xia, JB ,et al. Quantum mechanical effects in nanometer field effect transistors[J]. applied physics letters,2007,90(14):art.no.143108. |
| APA | Luo, JW ,Li, SS ,Xia, JB ,&Wang, LW .(2007).Quantum mechanical effects in nanometer field effect transistors.applied physics letters,90(14),art.no.143108. |
| MLA | Luo, JW ,et al."Quantum mechanical effects in nanometer field effect transistors".applied physics letters 90.14(2007):art.no.143108. |
入库方式： OAI收割
来源：半导体研究所
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