Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Wu, J (Wu, J.) ; Jin, P (Jin, P.) ; Jiao, YH (Jiao, Y. H.) ; Lv, XJ (Lv, X. J.) ; Wang, ZG (Wang, Z. G.) |
| 刊名 | nanotechnology
 |
| 出版日期 | 2007 |
| 卷号 | 18期号:16页码:art.no.165301 |
| 关键词 | ASSEMBLED QUANTUM DOTS |
| ISSN号 | issn: 0957-4484 |
| 通讯作者 | wu, j, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wuju@red.semi.ac.cn |
| 中文摘要 | a detailed observation was made using atomic force microscopy on the two- to three-dimensional (2d-3d) growth mode transition in the molecular-beam epitaxy of inas/gaas(001). the evolution of the 3d inas islands during the 2d-3d mode transition was divided into two successive phases. the first phase may be explained in terms of a critical phenomenon of the second-order phase transition. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9556]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu, J ,Jin, P ,Jiao, YH ,et al. Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy[J]. nanotechnology,2007,18(16):art.no.165301. |
| APA | Wu, J ,Jin, P ,Jiao, YH ,Lv, XJ ,&Wang, ZG .(2007).Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy.nanotechnology,18(16),art.no.165301. |
| MLA | Wu, J ,et al."Evolution of InAs/GaAs(001) islands during the two- to three-dimensional growth mode transition in molecular-beam epitaxy".nanotechnology 18.16(2007):art.no.165301. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。