The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis
文献类型：期刊论文
| 作者 | Wang, XL (Wang, X. L.) ; Zhao, DG (Zhao, D. G.) ; Jahn, U (Jahn, U.) ; Ploog, K (Ploog, K.) ; Jiang, DS (Jiang, D. S.) ; Yang, H (Yang, H.) ; Liang, JW (Liang, J. W.) |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2007 |
| 卷号 | 40期号:4页码:1113-1117 |
| 关键词 | PHOTODIODES |
| ISSN号 | issn: 0022-3727 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wxl@mail.semi.ac.cn |
| 中文摘要 | we have investigated the growth of algan epilayers on a sapphire substrate by metalorganic chemical vapour deposition using various low-temperature ( lt) aln buffer thicknesses. combined scanning electron microscopy and cathodoluminescence investigations reveal the correlation between the surface morphology and optical properties of algan films in a microscopic scale. it is found that the suitable thickness of the lt aln buffer for high quality algan growth is around 20 nm. the al compositional inhomogeneity of the algan epilayer is attributed to the low lateral mobility of al adatoms on the growing surface. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9560]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang, XL ,Zhao, DG ,Jahn, U ,et al. The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis[J]. journal of physics d-applied physics,2007,40(4):1113-1117. |
| APA | Wang, XL .,Zhao, DG .,Jahn, U .,Ploog, K .,Jiang, DS .,...&Liang, JW .(2007).The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis.journal of physics d-applied physics,40(4),1113-1117. |
| MLA | Wang, XL ,et al."The effects of LT AlN buffer thickness on the optical properties of AlGaN grown by MOCVD and Al composition inhomogeneity analysis".journal of physics d-applied physics 40.4(2007):1113-1117. |
入库方式： OAI收割
来源：半导体研究所
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