Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m
文献类型：期刊论文
| 作者 | Wang SM ; Tangring I ; Gu QF ; Sadeghi M ; Larsson A ; Wang XD ; Ma CH ; Buyanova IA ; Chen WM |
| 刊名 | thin solid films
 |
| 出版日期 | 2007 |
| 卷号 | 515期号:10页码:4348-4351 |
| 关键词 | metamorphic |
| ISSN号 | issn: 0040-6090 |
| 通讯作者 | wang, sm, chalmers, dept microtechnol & nanosci, s-41296 gothenburg, sweden. 电子邮箱地址: shumin.wang@mc2.chalmers.se |
| 中文摘要 | metamorphic ingaas quantum well structures grown on gaas reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying i-v characteristics. dark line defects are found in the qw post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. some challenges of epitaxial growth using this method for laser applications are discussed. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9562]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang SM,Tangring I,Gu QF,et al. Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m[J]. thin solid films,2007,515(10):4348-4351. |
| APA | Wang SM.,Tangring I.,Gu QF.,Sadeghi M.,Larsson A.,...&Chen WM.(2007).Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m.thin solid films,515(10),4348-4351. |
| MLA | Wang SM,et al."Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m".thin solid films 515.10(2007):4348-4351. |
入库方式： OAI收割
来源：半导体研究所
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