A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure
文献类型：期刊论文
| 作者 | Zhang RY (Zhang Ruiying) ; Zhou F (Zhou Fan) ; Bian J (Bian Jing) ; Zhao LJ (Zhao Lingjuan) ; Jian SS (Jian Shuisheng) ; Yu SY (Yu Siyuan) ; Wang W (Wang Wei) |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2007 |
| 卷号 | 22期号:3页码:283-286 |
| 关键词 | LINEWIDTH ENHANCEMENT FACTOR |
| ISSN号 | issn: 0268-1242 |
| 通讯作者 | zhang, ry, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | semiconductor optical amplifiers (soas) with n-type modulation-doped multiple quantum well structure have been investigated. the shortened carrier lifetime is derived from the pl spectrum and electrical modulation frequency response measurement. the carrier lifetime in semiconductor optical amplifiers with any n-type-2-modulated doping multiple quantum well structure is less than 60% of that in the undoped partner. the shortest measured carrier lifetime of 236 ps in the md-mqw soa with sheet carrier density of 3 x 10(12) cm(-2) was only 38% of that in the undoped mqw soa, which can increase the wavelength conversion efficiency via four wave mixing by a factor of about 7 and switching speed via xgm and xpm applications by a factor of 2.63. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9568]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang RY ,Zhou F ,Bian J ,et al. A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure[J]. semiconductor science and technology,2007,22(3):283-286. |
| APA | Zhang RY .,Zhou F .,Bian J .,Zhao LJ .,Jian SS .,...&Wang W .(2007).A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure.semiconductor science and technology,22(3),283-286. |
| MLA | Zhang RY ,et al."A short carrier lifetime semiconductor optical amplifier with n-type modulation-doped multiple quantum well structure".semiconductor science and technology 22.3(2007):283-286. |
入库方式： OAI收割
来源：半导体研究所
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