Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes
文献类型：期刊论文
| 作者 | Fu SH (Fu Sheng-Hui) ; Song GF (Song Guo-Feng) ; Chen LH (Chen Liang-Hui) |
| 刊名 | chinese physics
 |
| 出版日期 | 2007 |
| 卷号 | 16期号:3页码:817-820 |
| 关键词 | InGaAlAs/AlGaAs |
| ISSN号 | issn: 1009-1963 |
| 通讯作者 | fu, sh, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: fushenghui@red.semi.ac.cn |
| 中文摘要 | usually gaas/algaas is utilized as an active layer material in laser diodes operating in the spectral range of 800 850 nm. in this work, in addition to a traditional unstrained gaas/algaas distributed feedback (dfb) laser diode, a compressively strained ingaalas/algaas dfb laser diode is numerically investigated in characteristic. the simulation results show that the compressively strained dfb laser diode has a lower transparency carrier density, higher gain, lower auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained gaas/algaas dfb laser diode. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9576]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fu SH ,Song GF ,Chen LH . Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes[J]. chinese physics,2007,16(3):817-820. |
| APA | Fu SH ,Song GF ,&Chen LH .(2007).Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes.chinese physics,16(3),817-820. |
| MLA | Fu SH ,et al."Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes".chinese physics 16.3(2007):817-820. |
入库方式： OAI收割
来源：半导体研究所
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