Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix
文献类型：期刊论文
| 作者 | Xu B ; Ye XL; Jin P
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 90期号:10页码:art.no.103118 |
| 关键词 | INAS QUANTUM DOTS |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | lei, w, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wen.lei@uni-due.de |
| 中文摘要 | the authors report the self-organized growth of inas/inalas quantum wires on nominal (001) inp substrate and (001) inp substrates misoriented by 2 degrees, 4 degrees, and 8 degrees towards both [-110] and [110]. the influence of substrate misorientation on the structural and optical properties of these inas/inalas quantum wires is studied by transmission electron microscopy and photoluminescence measurements. compared with that grown on nominal (001) inp substrate, the density of inas/inalas quantum wires grown on misoriented inp(001) substrates is enhanced. a strong lateral composition modulation effect take place in the inalas buffer layers grown on misoriented inp substrates with large off-cut angles (4 degrees and 8 degrees), which induces a nucleation template for the first-period inas quantum wires and greatly improve the size distribution of inas quantum wires. inas/inalas quantum wires grown on inp (001) substrate 8 degrees off cut towards [-110] show the best size homogeneity and photoluminescence intensity. (c) 2007 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9578]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Ye XL,Jin P. Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix[J]. applied physics letters,2007,90(10):art.no.103118. |
| APA | Xu B,Ye XL,&Jin P.(2007).Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix.applied physics letters,90(10),art.no.103118. |
| MLA | Xu B,et al."Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix".applied physics letters 90.10(2007):art.no.103118. |
入库方式： OAI收割
来源：半导体研究所
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