Generation and suppression of deep level defects in InP
文献类型：期刊论文
| 作者 | Zhao YW (Zhao You-Wen) ; Dong ZY (Dong Zhi-Yuan) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:3页码:1476-1479 |
| 关键词 | indium phosphide |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | zhao, yw, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.cn |
| 中文摘要 | deep level defects in as-grown and annealed n-type and semi-insulating inp have been studied. after annealing in phosphorus ambient, a large quantity of deep level defects were generated in both n-type and semi-insulating inp materials. in contrast, few deep level defects exist in inp after annealing in iron phosphide ambient. the generation of deep level defects has direct relation with in-diffusion of iron and phosphorus in the annealing process. the in-diffused phosphorus and iron atoms occupy indium sites in the lattice, resulting in the formation of p anti-site defects and iron deep acceptors, respectively. t e results indicate that iron atoms fully occupy indium sites and suppress the formation of indium vacancy and p anti-site, etc., whereas indium vacancies and p anti-site defects. are formed after annealing in phosphor-us ambient. the nature of the deep level defects in inp has been studied based on the results. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9580]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao YW ,Dong ZY . Generation and suppression of deep level defects in InP[J]. acta physica sinica,2007,56(3):1476-1479. |
| APA | Zhao YW ,&Dong ZY .(2007).Generation and suppression of deep level defects in InP.acta physica sinica,56(3),1476-1479. |
| MLA | Zhao YW ,et al."Generation and suppression of deep level defects in InP".acta physica sinica 56.3(2007):1476-1479. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。