Electron irradiation induced defects in high temperature annealed InP single crystal
文献类型：期刊论文
| 作者 | Wang B (Wang Bo) ; Zhao YW (Zhao You-Wen) ; Dong ZY (Dong Zhi-Yuan) ; Deng AH (Deng Ai-Hong) ; Miao SS (Miao Shan-Shan) ; Yang J (Yang Jun) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:3页码:1603-1607 |
| 关键词 | InP |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | zhao, yw, sichuan univ, coll phys sci & technol, dept appl phys, chengdu 610065, peoples r china. 电子邮箱地址: zhaoyw@red.semi.ac.cn |
| 中文摘要 | electron irradiation induced defects in inp material which has been formed by high temperature annealing undoped inp in different atmosphere have been studied in this paper. in addition to fe acceptor, there is no obvious defect peak in the sample before irradiation, whereas five defect peaks with activation energies of 0.23 ev, 0.26 ev, 0.31 ev, 0.37 ev and 0.46 ev have been detected after irradiation. inp annealed in p ambient has more thermally induced defects, and the defects induced by electron irradiation have characteristics of complex defect. after irradiation, carrier concentration and mobility of the samples have suffered obvious changes. under the same condition, electron irradiation induced defects have fast recovery behavior in the fep2 ambient annealed inp. the nature of defects, as well as their recovery mechanism and influence on material property have been discussed from the results. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9582]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang B ,Zhao YW ,Dong ZY ,et al. Electron irradiation induced defects in high temperature annealed InP single crystal[J]. acta physica sinica,2007,56(3):1603-1607. |
| APA | Wang B ,Zhao YW ,Dong ZY ,Deng AH ,Miao SS ,&Yang J .(2007).Electron irradiation induced defects in high temperature annealed InP single crystal.acta physica sinica,56(3),1603-1607. |
| MLA | Wang B ,et al."Electron irradiation induced defects in high temperature annealed InP single crystal".acta physica sinica 56.3(2007):1603-1607. |
入库方式： OAI收割
来源：半导体研究所
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