Structure optimization of field-plate AlGaN/GaN HEMTs
文献类型：期刊论文
| 作者 | Luo WJ (Luo Weijun) ; Wei K (Wei Ke) ; Chen XJ (Chen Xiaojuan) ; Li CZ (Li Chengzhan) ; Liu XY (Liu Xinyu) ; Wang XL (Wang Xiaoliang) |
| 刊名 | microelectronics journal
 |
| 出版日期 | 2007 |
| 卷号 | 38期号:2页码:272-274 |
| 关键词 | GaN |
| ISSN号 | issn: 0026-2692 |
| 通讯作者 | luo, wj, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: luoweijun@mail.semi.ac.cn |
| 中文摘要 | algan/gan high electron mobility transistors (hemts) on 6h-sic with varying field-plate length and gate-drain spacing were fabricated and analyzed. the classical small signal fet model and the well-known coldfet method were used to extract the small signal parameters of the devices. though the devices with field plates exhibited lower better f(t) characteristic, they did demonstrate better f(max), msg and power density performances than the conventional devices without field plate. besides, no independence of dc characteristic on field-plate length was observed. with the increase of the field-plate length and the gate-drain spacing, the characteristic of f(t) and f(max), degraded due to the large parasitic effects. loadpull method was used to measure the microwave power performance of the devices. under the condition of continuous wave at 5.4 ghz, an output power density of 4.69 w/mm was obtained for device with field-plate length of 0.5 mu m and gate-drain length of 2 mu m. (c) 2006 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9596]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo WJ ,Wei K ,Chen XJ ,et al. Structure optimization of field-plate AlGaN/GaN HEMTs[J]. microelectronics journal,2007,38(2):272-274. |
| APA | Luo WJ ,Wei K ,Chen XJ ,Li CZ ,Liu XY ,&Wang XL .(2007).Structure optimization of field-plate AlGaN/GaN HEMTs.microelectronics journal,38(2),272-274. |
| MLA | Luo WJ ,et al."Structure optimization of field-plate AlGaN/GaN HEMTs".microelectronics journal 38.2(2007):272-274. |
入库方式： OAI收割
来源：半导体研究所
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