Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD
文献类型：期刊论文
| 作者 | Liu Z (Liu Zhe) ; Wang XL (Wang Xiaoliang) ; Wang JX (Wang Junxi) ; Hu GX (Hu Guoxin) ; Guo LC (Guo Lunchun) ; Li JP (Li Jianping) ; Li JM (Li Jinmin) ; Zeng YP (Zeng Yiping) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 298 sp.iss.si期号:0页码:281-283 |
| 关键词 | characterization |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: xlwang@red.semi.ac.cn |
| 中文摘要 | low temperature (lt) aln interlayer and insertion of superlattice are two effective methods to reduce crack and defects for gan grown on si substrate. in this paper, the influence of two kinds of buffer on stress, morphology and defects of gan/si are studied and discussed. the results measured by optical microscope and raman shift show that insertion of superlattice is more effective than insertion of lt-aln in preventing the formation of cracks in gan grown on si substrate. cross-sectional tem images show that the not only screw but edge-type dislocation densities are greatly reduced by using the superlattice buffer. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9602]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Z ,Wang XL ,Wang JX ,et al. Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD[J]. journal of crystal growth,2007,298 sp.iss.si(0):281-283. |
| APA | Liu Z .,Wang XL .,Wang JX .,Hu GX .,Guo LC .,...&Zeng YP .(2007).Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD.journal of crystal growth,298 sp.iss.si(0),281-283. |
| MLA | Liu Z ,et al."Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD".journal of crystal growth 298 sp.iss.si.0(2007):281-283. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。