The influence of internal electric fields on the transition energy of InGaN/gaN quantum well
文献类型：期刊论文
| 作者 | Guo LC (Guo Lunchun) ; Wang XL (Wang Xiaoliang) ; Xiao HL (Xiao Hongling) ; Wang BZ (Wang Baozhu) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 298 sp.iss.si期号:0页码:522-526 |
| 关键词 | computer simulation |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xlwang@red.semi.ac.cn |
| 中文摘要 | we present a new way to meet the amount of strain relaxation in an ingan quantum well layer grown on relaxed gan by calculating and measuring its internal field. with perturbation theory, we also calculate the transition energy of ingan/gan sqws as affected by internal fields. the newly reported experimental data by graham et al. fit our calculations well on the assumption that the ingan well layer suffered a 20% strain relaxation, we discuss the differences between our calculated results and the experimental data. our calculation suggests that with the increase of indium mole fraction in the ingan/gan quantum well, the effect of polarization fields on the luminescence of the quantum well will increase. moreover, our calculation also suggests that an increase in the quantum well width by only one monolayer can result in a large reduction in the transition energy. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9604]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Guo LC ,Wang XL ,Xiao HL ,et al. The influence of internal electric fields on the transition energy of InGaN/gaN quantum well[J]. journal of crystal growth,2007,298 sp.iss.si(0):522-526. |
| APA | Guo LC ,Wang XL ,Xiao HL ,&Wang BZ .(2007).The influence of internal electric fields on the transition energy of InGaN/gaN quantum well.journal of crystal growth,298 sp.iss.si(0),522-526. |
| MLA | Guo LC ,et al."The influence of internal electric fields on the transition energy of InGaN/gaN quantum well".journal of crystal growth 298 sp.iss.si.0(2007):522-526. |
入库方式： OAI收割
来源：半导体研究所
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