MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
文献类型：期刊论文
| 作者 | Wang XL (Wang Xiaoliang) ; Wang CM (Wang Cuimei) ; Hu GX (Hu Guoxin) ; Mao HL (Mao Hongling) ; Fang CB (Fang Cebao) ; Wang JX (Wang Junxi) ; Ran JX (Ran Junxue) ; Li HP (Li Hanping) ; Li JM (Li Jinmin) ; Wang ZG (Wang, Zhanguo) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 298 sp.iss.si期号:0页码:791-793 |
| 关键词 | 2DEG |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | high-mobility al0.3ga0.7n/aln/gan high electron mobility transistors (hemt) structure has been grown by metalorganic chemical vapor deposition (mocvd) on sapphire substrate. electron mobility of 2185 cm(2)/v s at room temperature and 15,400 cm(2)/v s at 80 k with 2deg density of 1.1 x 10(13) cm(-2) are achieved. the corresponding sheet resistance of the hemt wafer is 258.7 omega/sq. the aln interfacial layer between the gan buffer and the algan barrier layer reduces the alloy disorder scattering. x-ray diffraction (xrd), atomic force microscopy (afm) and transmission electron microscopy (tem) measurements have been conducted, and confirmed that the wafer has a high crystal quality. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9606]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XL ,Wang CM ,Hu GX ,et al. MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate[J]. journal of crystal growth,2007,298 sp.iss.si(0):791-793. |
| APA | Wang XL .,Wang CM .,Hu GX .,Mao HL .,Fang CB .,...&Wang ZG .(2007).MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate.journal of crystal growth,298 sp.iss.si(0),791-793. |
| MLA | Wang XL ,et al."MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate".journal of crystal growth 298 sp.iss.si.0(2007):791-793. |
入库方式： OAI收割
来源：半导体研究所
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