Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer
文献类型：期刊论文
| 作者 | Fang CB (Fang Cebao) ; Wang XL (Wang Xiaoliang) ; Xiao HL (Xiao Hongling) ; Hu GX (Hu Guoxin) ; Wang CM (Wang Cuimei) ; Wang XY (Wang Xiaoyan) ; Li JP (Li Jianping) ; Wang JX (Wang Junxi) ; Li CJ (Li Chengji) ; Zeng YP (Zeng Yiping) ; Li JM (Li Jinmin) ; Wang ZG (Wang Zanguo) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 298 sp.iss.si期号:0页码:800-803 |
| 关键词 | deep defect |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xlwang@red.semi.ac.cn |
| 中文摘要 | in undoped high-resistivity gan epilayers grown by metalorganic chemical vapor deposition (mocvd) on sapphire, deep levels are investigated by persistent photoconductivity (ppc) and optical quenching (oq) of photoconductivity (pc) measurements. the ppc and oq are studied by exciting the samples with two beams of radiation of various wavelengths and intensities. when the light wavelengths of 300 and 340 nm radiate the gan epilayer, the photocurrent without any quenching effect is rapidly increased because the band gap transition only occurs. if the background light is 340 nm and the quenching light is 564 or 828 nm, the quenching of a small photocurrent generates but clearly. two broad quenching bands that extend from 385 to 716 nm and from 723 to 1000 nm with a maximum at approximately 2.2 ev (566 nm) is observed. these quenching bands are attributed to hole trap level's existence in the gan epilayer. we point out that the origin of the defects responsible for the optical quenching can be attributed to nitrogen antisite and/or gallium vacancy. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9608]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fang CB ,Wang XL ,Xiao HL ,et al. Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer[J]. journal of crystal growth,2007,298 sp.iss.si(0):800-803. |
| APA | Fang CB .,Wang XL .,Xiao HL .,Hu GX .,Wang CM .,...&Wang ZG .(2007).Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer.journal of crystal growth,298 sp.iss.si(0),800-803. |
| MLA | Fang CB ,et al."Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer".journal of crystal growth 298 sp.iss.si.0(2007):800-803. |
入库方式： OAI收割
来源：半导体研究所
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