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AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
文献类型：期刊论文
| 作者 | Wang XL (Wang Xiaoliang) ; Hu GX (Hu Guoxin) ; Ma ZY (Ma Zhiyong) ; Ran JX (Ran Junxue) ; Wang CM (Wang Cuimei) ; Mao HL (Mao Hongling) ; Tang H (Tang Han) ; Li HP (Li Hanping) ; Wang JX (Wang Junxi) ; Zeng YP (Zeng Yiping) ; Jinmin LM (Li Jinmin) ; Wang ZG (Wang Zhanguo) |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2007 |
| 卷号 | 298 sp.iss.si期号:0页码:835-839 |
| 关键词 | 2DEG |
| ISSN号 | issn: 0022-0248 |
| 通讯作者 | wang, xl, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xlwang@red.semi.ac.cn |
| 中文摘要 | enhancement of the electrical properties in an algan/gan high electron mobility transistor (hemt) structures was demonstrated by employing the combination of a high mobility gan channel layer and an aln interlayer. the structures were grown on 50 mm semi-insulating (si) 6h-sic substrates by metalorganic chemical vapor deposition (mocvd). the room temperature (rt) two-dimensional electron gas (2deg) mobility was as high as 2215 cm(2)/v s, with a 2deg concentration of 1.044 x 10(13)cm(-2). the 50 mm hemt wafer exhibited a low average sheet resistance of 251.0 omega/square, with a resistance uniformity of 2.02%. the 0.35 pin gate length hemt devices based on this material structure, exhibited a maximum drain current density of 1300 ma/mm, a maximum extrinsic transconductance of 314 ms/mm, a current gain cut-off frequency of 28 ghz and a maximum oscillation frequency of 60 ghz. the maximum output power density of 4.10 w/mm was achieved at 8 ghz, with a power gain of 6.13 db and a power added efficiency (pae) of 33.6%. (c) 2006 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9610]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XL ,Hu GX ,Ma ZY ,et al. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD[J]. journal of crystal growth,2007,298 sp.iss.si(0):835-839. |
| APA | Wang XL .,Hu GX .,Ma ZY .,Ran JX .,Wang CM .,...&Wang ZG .(2007).AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD.journal of crystal growth,298 sp.iss.si(0),835-839. |
| MLA | Wang XL ,et al."AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD".journal of crystal growth 298 sp.iss.si.0(2007):835-839. |
入库方式： OAI收割
来源：半导体研究所
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