Low threshold current density operation of strain-compensated quantum cascade laser
文献类型：期刊论文
| 作者 | Li L
|
| 刊名 | chinese physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 24期号:3页码:717-720 |
| 关键词 | MU-M |
| ISSN号 | issn: 0256-307x |
| 通讯作者 | liu, fq, chinese acad sci, inst semicond, key lab semicond mat, beijing 100083, peoples r china. 电子邮箱地址: fqliu@red.semi.ac.cn |
| 中文摘要 | we report the low threshold current density operation of strain-compensated in0.64ga0.36as/in0.38al0.62as quantum cascade lasers emitting near 4.94 mu m. by employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57 ka/cm(2) at 80k is achieved for an uncoated 20-mu m-wide and 2.5-mm-long laser. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9616]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li L. Low threshold current density operation of strain-compensated quantum cascade laser[J]. chinese physics letters,2007,24(3):717-720. |
| APA | Li L.(2007).Low threshold current density operation of strain-compensated quantum cascade laser.chinese physics letters,24(3),717-720. |
| MLA | Li L."Low threshold current density operation of strain-compensated quantum cascade laser".chinese physics letters 24.3(2007):717-720. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。